power transistor arrays 1 publication date: march 2004 sjk00012aed parameter symbol rating unit collector-base voltage (emitter open) v cbo 30 5v collector-emitter voltage (base open) v ceo 30 5v emitter-base voltage (collector open) v ebo 5v collector current i c 4a peak collector current i cp 8a collector power dissipation p c 15 w t a = 25 c 2.4 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 5 ma, i b = 02535v collector-base cutoff current (emitter open) i cbo v cb = 25 v, i e = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 02ma forward current transfer ratio h fe1 v ce = 3 v, i c = 0.5 a 1 000 ? h fe2 * 1 v ce = 3 v, i c = 3 a 1 000 10 000 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 12 ma 2.0 v i c = 5 a, i b = 20 ma 4.0 base-emitter saturation voltage v be(sat) i c = 3 a, i b = 12 ma 2.5 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = 3 a 0.3 s storage time t stg i b1 = 12 ma, i b2 = ? 12 ma 3.0 s fall time t f v cc = 20 v 1.0 s energy handling capability * 2 e s/b i c = 2 a, l = 100 mh, r be = 100 ? 200 mj electrical characteristics t c = 25 c 3 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * 1: rank classification * 2: e s/b test circuit rank free p q h fe 1 000 to 10 000 2 000 to 10 000 1 000 to 5 000 PUA3122 (pu3122) silicon npn triple diffusion planar type darlington for power amplification features ? built-in zener diode (30 v) between collector and base ? small variation in withstand pressure ? large energy handling capability ? high-speed switching ? npn 3 elements absolute maximum ratings t c = 25 c x l r be mercury relay y z note) the part number in the parenthesis shows conventional part number. unit: mm 20.2 0.3 2.54 0.2 7 2.57 = 17.78 0.25 12345678 1.0 0.25 0.5 0.15 0.8 0.25 c 1.5 0.5 0.5 0.15 9.5 0.2 8.0 0.2 4.4 0.5 1.65 0.2 solder dip 5.3 0.5 4.0 0.2 1: emitter 2: base 3: collector 4: base 5: collector 6: base 7: collector 8: emitter sip8-a1 package maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
PUA3122 2 sjk00012aed i c ? v ce v ce(sat) ? i c v be(sat) ? i c h fe ? i c guidance load characteristic safe operation area 0 160 80 120 40 0 20 16 12 4 8 ( 1 ) t c = t a ( 2 ) with a 50 50 2 mm al heat sink ( 3 ) with a 50 25 2 mm al heat sink ( 4 ) without heat sink ( 1 ) ( 2 ) ( 3 ) ( 4 ) collector power dissipation p c ( w ) ambient temperature t a ( c ) 05 4 13 2 0 2 1 3 4 5 6 t c = 25 c i b = 2.0 ma 1.6 ma 1.8 ma 1.4 ma 1.2 ma 1.0 ma 0.8 ma 0.6 ma 0.4 ma 0.2 ma collector current i c ( a ) collector-emitter voltage v ce ( v ) 0.01 0.1 1 10 0.01 100 i c / i b = 250 0.1 1 10 25 c ? 25 c t c = 100 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.01 100 i c / i b = 250 0.1 1 10 25 c 100 c t c = ? 25 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 v ce = 3 v 10 5 10 4 10 3 10 2 10 ? 25 c t c = 100 c 25 c forward current transfer ratio h fe collector current i c ( a ) 1 10 100 1 000 0.01 100 0.1 1 10 r be = 100 ? t c = 25 c 200 mj collector current i c ( a ) coil l (mh ) 1 10 100 1 000 0.01 0.1 1 10 100 non repetitve pulse t c = 25 c ( per circuit ) t = 10 ms t = 1 ms i cp collector current i c ( a ) collector-emitter voltage v ce ( v ) p c ? t a internal connection 1 8 2 35 4 7 6 maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
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